PH8253 PHYSICS FOR ELECTRONICS ENGINEERING Lecture Notes Syllabus Book Previous 2 13 15 Marks
Anna University Important Question Bank With Answers Regulation 2017
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PH8253 PHYSICS FOR ELECTRONICS ENGINEERING
(Common to BME, ME, CC, ECE, EEE, E&I, ICE)
UNIT I ELECTRICAL PROPERTIES OF MATERIALS
Classical free electron theory - Expression for electrical conductivity – Thermal conductivity, expression - Wiedemann-Franz law – Success and failures - electrons in metals – Particle in a three dimensional box – degenerate states – Fermi- Dirac statistics – Density of energy states – Electron in periodic potential: Bloch thorem – metals and insulators - Energy bands in solids– tight binding approximation - Electron effective mass – concept of hole.
UNIT II SEMICONDUCTOR PHYSICS
Intrinsic Semiconductors – Energy band diagram – direct and indirect semiconductors – Carrier concentration in intrinsic semiconductors – extrinsic semiconductors - Carrier concentration in Ntype & P-type semiconductors – Carrier transport: Velocity-electric field relations – drift and diffusion transport - Einstein’s relation – Hall effect and devices – Zener and avalanche breakdown in p-n junctions - Ohmic contacts – tunnel diode - Schottky diode – MOS capacitor - power transistor.
UNIT III MAGNETIC AND DIELECTRIC PROPERTIES OF MATERIALS
Magnetism in materials – magnetic field and induction – magnetization - magnetic permeability and susceptibility–types of magnetic materials – microscopic classification of magnetic materials - Ferromagnetism: origin and exchange interaction- saturation magnetization and Curie temperature – Domain Theory. Dielectric materials: Polarization processes – dielectric loss – internal field – Clausius-Mosotti relation- dielectric breakdown – high-k dielectrics.
UNIT IV OPTICAL PROPERTIES OF MATERIALS
Classification of optical materials – carrier generation and recombination processes - Absorption emission and scattering of light in metals, insulators and Semiconductors (concepts only) - photo current in a P- N diode – solar cell –photo detectors - LED – Organic LED – Laser diodes – excitons - quantum confined Stark effect – quantum dot laser.
UNIT V NANOELECTRONIC DEVICES
Introduction - electron density in bulk material – Size dependence of Fermi energy– quantum confinement – quantum structures - Density of states in quantum well, quantum wire and quantum dot structures –Zener-Bloch oscillations – resonant tunneling – quantum interference effects – mesoscopic structures: conductance fluctuations and coherent transport – Coulomb blockade effects - Single electron phenomena and Single electron Transistor – magnetic semiconductors– spintronics - Carbon nanotubes: Properties and applications.
TEXT BOOKS: 1. Kasap, S.O. “Principles of Electronic Materials and Devices”, McGraw-Hill Education, 2007. 2. Umesh K Mishra & Jasprit Singh, “Semiconductor Device Physics and Design”, Springer, 2008. 3. Wahab, M.A. “Solid State Physics: Structure and Properties of Materials”. Narosa Publishing House, 2009.
REFERENCES 1. Garcia, N. & Damask, A. “Physics for Computer Science Students”. Springer-Verlag, 2012. 2. Hanson, G.W. “Fundamentals of Nanoelectronics”. Pearson Education, 2009 3. Rogers, B., Adams, J. & Pennathur, S. “Nanotechnology: Understanding Small Systems”. CRC Press, 2014
PH8253 PHYSICS FOR ELECTRONICS ENGINEERING Lecture Notes Syllabus Book Previous 2 13 15 Marks Anna University Important Question Bank With Answers Regulation 2017 Study Materials Pdf Ppt
PH8253 PHYSICS FOR ELECTRONICS ENGINEERING Syllabus Notes Question Bank
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